30N120 IGBT Transistor – 1200V 60A High-Speed Switching

Electra Store SKU: CM-22084

65.00 EGP

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Overview

The 30N120 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for fast switching applications. With a collector-emitter voltage of 1200V and a continuous collector current of 60A, this device is ideal for use in motor drives, inverters, UPS systems, welding equipment, and other high-power switching circuits. It combines the simple gate-drive characteristics of MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors.

Description

Key Features:

✅ Type: IGBT (Insulated Gate Bipolar Transistor)
✅ Collector-Emitter Voltage (Vce): 1200V
✅ Continuous Collector Current (Ic): 60A
✅ Pulsed Collector Current: 120A (peak)
✅ Low Saturation Voltage (Vce(sat)): 2.0V @ 60A
✅ Switching Speed: Fast switching with minimal power loss
✅ Package Type: TO-247 for efficient heat dissipation

Applications:

⚡ Motor Drives and Controllers
🔋 Uninterruptible Power Supplies (UPS)
🛠️ Welding Equipment
📈 Switch-Mode Power Supplies (SMPS)
🤖 Industrial Automation Systems

Specifications:

Part Number: 30N120
Type: N-Channel IGBT
Vce (Collector-Emitter Voltage): 1200V
Ic (Collector Current): 60A continuous, 120A pulsed
Gate Threshold Voltage (Vge): ±20V max
Power Dissipation: 250W
Package: TO-247
Operating Temperature Range: -55°C to +150°C

This transistor is perfect for engineers and hobbyists working on high-power electronic designs that require efficiency, reliability, and compactness.