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IRF710 N-Channel Power MOSFET – TO-18 Metal

IRF710 N-Channel Power MOSFET – TO-18 Metal

Electra Store SKU: CM-22023
25.00 EGP

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Categories: Transistors

Overview

The IRF710 is a classic N-Channel Power MOSFET housed in a robust TO-18 metal can package, designed for medium voltage and low to moderate current switching applications. It offers reliable performance with good switching speed and low gate drive requirements, ideal for analog switching, power control, and amplifier circuits.

Description

Key Features:

  • Drain-Source Voltage (Vds): 400V

  • Continuous Drain Current (Id): 0.45A @ 25°C

  • RDS(on): Typically around 2.0 Ohm

  • Gate Threshold Voltage (Vgs(th)): 2.0 – 4.0V

  • Total Power Dissipation (Pd): 0.8W

  • Package Type: TO-18 (Metal Can)

  • High Voltage Capability

  • Low Gate Drive Voltage

  • Robust Metal Can Package for Thermal Stability


🔧 Typical Applications:

  • Analog switching circuits

  • Low power amplification

  • Signal processing

  • High voltage switching

  • Precision electronic control


📦 Technical Specifications:

Parameter Value
Type N-Channel MOSFET
Maximum Drain-Source Voltage (Vds) 400V
Maximum Continuous Drain Current (Id) 0.45A
Typical RDS(on) ~2.0 Ohm
Gate Threshold Voltage (Vgs(th)) 2.0 – 4.0V
Maximum Power Dissipation (Pd) 0.8W
Package TO-18 Metal Can

⚠️ Note:

Due to its low power dissipation, the IRF710 is best suited for low current applications and should be used within specified limits for reliable operation.


The IRF710 is a reliable and classic MOSFET option for applications requiring high voltage tolerance with moderate switching speed and current capacity in a compact metal package.

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