IRFP4568-150 V / 171 Amp N-Channel Power MOSFET

Product Description

The IRFP4568 150V 171A N-Channel Power MOSFET is a high-current power switching transistor designed for demanding power electronics applications. It is an N-channel MOSFET from the StrongIRFET™ family, specified for a maximum drain-to-source voltage of 150V and a continuous drain current of up to 171A at 25°C, making it suitable for high-power switching and power conversion circuits.

The device features a low RDS(on) of up to 5.9mΩ at VGS = 10V, helping reduce conduction losses when the MOSFET is fully enhanced. Its high current capability and low on-state resistance make it suitable for applications where efficient switching and high load-current handling are required.

The IRFP4568 is housed in a TO-247AC package, providing a practical through-hole form factor for power electronics designs and allowing effective thermal management when properly mounted to an appropriate heatsink. The device has a maximum power dissipation rating of 517W under the specified thermal conditions.

The MOSFET supports a gate-to-source voltage of ±30V and has a maximum operating junction temperature of 175°C. It also incorporates an intrinsic body diode, which is relevant in switching and power-conversion circuits where reverse current paths are required.

The IRFP4568 is intended for applications such as high-efficiency synchronous rectification, switching-mode power supplies, uninterruptible power supplies, high-speed power switching, and hard-switched or high-frequency circuits. Proper gate-drive voltage, PCB layout, thermal management, and operating conditions are essential when using the device near its maximum voltage or current ratings.

Features

• N-channel power MOSFET

• 150V maximum drain-to-source voltage

• Up to 171A continuous drain current at 25°C

• Low RDS(on) for reduced conduction losses

• 5.9mΩ maximum RDS(on) at VGS = 10V

• 517W maximum power dissipation under specified conditions

• ±30V maximum gate-to-source voltage

• Integrated body diode

• TO-247AC through-hole package

• Maximum junction temperature of 175°C

• Suitable for high-current and high-power switching applications

• Designed for demanding power conversion circuits

Specifications

• Part Number: IRFP4568

• Product Type: N-Channel Power MOSFET

• Technology: StrongIRFET™

• Drain-to-Source Voltage (VDSS): 150V

• Continuous Drain Current (ID): 171A @ 25°C

• Continuous Drain Current @ 100°C: 121A

• Pulsed Drain Current (IDM): 684A

• RDS(on): 4.8mΩ typical / 5.9mΩ maximum

• Gate-to-Source Voltage (VGS): ±30V

• Maximum Power Dissipation: 517W

• Gate Charge (Qg): 151nC typical

• Junction Temperature: -55°C to +175°C

• Package: TO-247AC

• Mounting: Through-Hole (THT)

Applications

• Switching-mode power supplies (SMPS)

• High-current DC-DC converters

• Uninterruptible power supplies (UPS)

• Synchronous rectification

• High-speed power switching

• High-frequency switching circuits

• Power inverter circuits

• Battery power systems

• Industrial power electronics

• Motor control and power switching