IRF510 N-Channel Power MOSFET – TO-220

Electra Store SKU: CM-22015

20.00 EGP

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Overview

The IRF510 is a popular N-Channel Power MOSFET known for its low gate drive requirements, fast switching speed, and reliable performance. It is widely used in switching applications, RF amplification, power supplies, and DIY electronics projects. Its TO-220 package allows for easy mounting and efficient heat dissipation.

Description

✅ Key Features:

Drain-Source Voltage (Vds): 100V
Continuous Drain Current (Id): 5.6A @ 25°C
RDS(on): 0.54 Ohm (max)
Gate Threshold Voltage (Vgs(th)): 2.0 – 4.0V
Total Power Dissipation (Pd): 43W
Package Type: TO-220
Fast Switching
Low Gate Drive Requirements
Reliable for Low-to-Medium Power Applications
Suitable for Linear and Switching Modes

🔧 Typical Applications:

RF Amplifiers (commonly in ham radio projects)
Low-Voltage Switching Circuits
DC-DC Converters
Power Inverters
DIY Power Electronics Projects
Audio Amplifier Circuits

📦 Technical Specifications:

Parameter	Value
Type	N-Channel MOSFET
Vds (Max)	100V
Id (Max)	5.6A
Rds(on) (Max)	0.54 Ohm
Vgs(th)	2.0 – 4.0V
Package	TO-220
Power Dissipation (Max)	43W

⚠️ Note:

Although the IRF510 can handle moderate current, it is recommended to use a heatsink for continuous high-power operation.

The IRF510 is a cost-effective and versatile MOSFET, ideal for both beginners and experienced engineers working on small to mid-range power control and switching tasks.